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H7N0203AB
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1119-0500 (Previous: ADE-208-1490C) Rev.5.00 Sep 07, 2005
Features
* Low on-resistance RDS (on) =2.4 m typ. * Low drive current * 4.5 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB)
D
G
1. Gate 2. Drain (Flange) 3. Source
1
2
3
S
Rev.5.00 Sep 07, 2005 page 1 of 7
H7N0203AB
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Value at Tc = 25C Symbol VDSS VGSS ID ID (pulse) IDR
Note 1
Value 20 20 90 360 90 20 40 100 1.25 150 -55 to +150
Unit V V A A A A mJ W C/W C C
IAP Note 2 EAR Pch ch-c Tch Tstg
Note 3
Note 2
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (off) RDS (on) |yfs| Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) tf VDF trr Min 20 20 -- -- 1.0 -- -- 80 -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 2.4 3.5 140 6800 1850 750 110 22 20 32 380 110 35 0.90 60 Max -- -- 10 10 2.5 3.0 5.1 -- -- -- -- -- -- -- -- -- -- -- -- -- Unit V V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 20 V, VGS = 0 Note 4 ID = 1 mA, VDS = 10 V ID = 45 A, VGS = 10 V Note 4 ID = 45 A, VGS = 4.5 V ID = 45 A, VDS = 10 V VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 10 V ID = 90 A VGS = 10 V, ID = 45 A RL = 0.22 Rg = 4.7 IF = 90 A, VGS = 0 IF = 90 A, VGS = 0 diF/dt = 50 A/s
Note 4 Note 4
Rev.5.00 Sep 07, 2005 page 2 of 7
H7N0203AB
Main Characteristics
Power vs. Temperature Derating
160 1000 300
Maximum Safe Operation Area
10 s
10 1 m 0 s s
Pch (W)
(A)
100 30 10 DC Operation (Tc = 25C)
120
Channel Dissipation
80
Drain Current
ID
40
PW = 10 ms 1 Operation in (1 shot) this area is 0.3 limited by RDS (on) 0.1 0.03 Ta = 25C 0.3 1 3 10 30 100
3
0
0
50
100
150
200
0.01 0.1
Case Temperature
Tc (C)
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
100 10 V 5V 3.5 V 3.0 V 60 2.8 V 40 Pulse Test 100
Typical Transfer Characteristics
VDS = 10 V Pulse Test
ID (A)
ID (A) Drain Current
80
80
60
Drain Current
40 -25C 20 Tc = 75C 25C 0
20 VGS = 2.4 V 0 0 2 4 6 8 10
0
1
2
3
4
5
Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
VDS (on) (mV)
0.4 Pulse Test 0.3
Static Drain to Source on State Resistance vs. Drain Current
Drain to Source On State Resistance RDS (on) (m)
10 Pulse Test
5 VGS = 4.5 V 10 V 2
Drain to Source Voltage
0.2 ID = 50 A 0.1 20 A 0 0 4 8 12 16 10 A 20
1 1 10 100 1000
Gate to Source Voltage
VGS (V)
Drain Current
ID (A)
Rev.5.00 Sep 07, 2005 page 3 of 7
H7N0203AB
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance |yfs| (S)
8 Pulse Test 6 ID = 10, 20 A 4 VGS = 4.5 V 50 A 1000 Tc = -25C 100
Static Drain to Source on State Resistance RDS (on) (m)
Forward Transfer Admittance vs. Drain Current
10 75C 1
25C
2 VGS = 10 V 0 -25
ID = 10, 20, 50 A
VDS = 10 V Pulse Test 0.1 0.01 0.1 1 10 100
0
25
50
75
100 125 150
Case Temperature
Tc
(C)
Drain Current ID (A)
Typical Capacitance vs. Drain to Source Voltage
(V)
100000 50000 50
Dynamic Input Characteristics
ID = 90 A 40 VDD = 5 V 10 V 20 V VDS 20 8
VGS 16
Capacitance C (pF)
20000 10000 5000 2000 1000 500 200 100 0 4 8 12 16 20 VGS = 0 f = 1 MHz Crss Coss Ciss
VDS
Drain to Source Voltage
30
12
10
0 0 40
VDD = 20 V 10 V 5V 80 120 160
4
0 200
Drain to Source Voltage VDS (V)
Gate Charge
Qg (nc)
Switching Characteristics
1000 500
Static Drain to Source on State Resistance vs. Drain Current
100 tr
Reverse Recovery Time trr (ns)
VGS = 10 V, VDD = 10 V duty 1 %
Switching Time t (ns)
200 td(off) 100 50 tf td(on)
50
20 di / dt = 50 A / s VGS = 0, Ta = 25C 10 0.1 0.2 0.5 1 2 5 10 20 50 100
20 10 0.1
0.3
1
3
10
30
100
Drain Current
ID (A)
Drain Current
IDR (A)
Rev.5.00 Sep 07, 2005 page 4 of 7
Gate to Source Voltage
VGS (V)
20
H7N0203AB
Reverse Drain Current vs. Source to Drain Voltage Maximum Avalanche Energy vs. Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
100
50 IAP = 20 A VDD = 10 V duty < 0.1 % Rg 50
(A)
IF
80
10 V VGS = 0, -5 V
40
Reverse Drain Current
60
5V
30
40
20
20 Pulse Test 0 0.4 0.8 1.2 1.6 2.0
10
0
0 25
50
75
100
125
150
Source to Drain Voltage
VSDF (V)
Channel Temperature Tch (C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3 Tc = 25C 1
D=1 0.5
0.3
0.2
0.1
0.1
ch - c (t) = s (t) * ch - c ch - c = 1.25C/W, Tc = 25C PDM PW T 1m 10 m 100 m 1 10
0.05
0.03
2 0.0 e 01 uls 0. tp ho 1s
D=
PW T
0.01 10
100
Pulse Width PW (S)
Avalanche Test Circuit
Avalanche Waveform 1 * L * IAP2 * 2 VDSS VDSS - VDD
V(BR)DSS IAP VDD ID VDS
VDS Monitor
L IAP Monitor
EAR =
Rg
D.U.T
Vin 15 V
50 VDD
0
Rev.5.00 Sep 07, 2005 page 5 of 7
H7N0203AB
Switching Time Test Circuit Switching Time Waveform
Vin Monitor D.U.T. Rg RL
Vout Monitor Vin Vout 10% 10%
90%
10%
Vin 10 V
VDS = 10 V td(on)
90% tr
90% td(off) tf
Rev.5.00 Sep 07, 2005 page 6 of 7
H7N0203AB
Package Dimensions
JEITA Package Code
SC-46
RENESAS Code
PRSS0004AC-A
Package Name TO-220AB / TO-220ABV
MASS[Typ.] 1.8g
Unit: mm
11.5 Max
2.79 0.2
10.16 0.2 9.5 8.0 3.6 -0.08
+0.2 -0.1
+0.1
4.44 0.2 1.26 0.15
6.4
18.5 0.5
15.0 0.3
1.27
2.7 Max
7.8 0.5
0.76 0.1
14.0 0.5
1.5 Max
2.54 0.5
2.54 0.5
0.5 0.1
Ordering Information
Part Name Quantity Shipping Container H7N0203AB-E 500 pcs Box (Sack) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.5.00 Sep 07, 2005 page 7 of 7
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

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